(PDF) KRF7338 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7338
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7338 Features Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current,VGS@10V , Ta = 25 ID Continuous Drain Current ,VGS@10V , Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation Power Dissipation @Ta= 25 3 @Ta= 70 3 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 3 R JA Junction-to-Drain Lead R JL 1 Repetitive rating; pulse width limited by max. junction temperature. 2 Pulse width 400 s; duty cycle 2%. 3 Surface mounted on 1 in square Cu board. 4 The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. N-Channel P-Channel 12 -12 6.3 -3.0 5.2 -2.5 26 -13 2.0 1.3 16 12 *4 8.0 -55 to + 150 62.5 20 Unit V A W mV/ V /W www.kexin.com.cn 1 1 page

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PDF KRF7338 Data sheet ( Hoja de datos )