(PDF) KRF7325 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7325
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7325 ICIC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain- Source Voltage VDS Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID Continuous Drain Current, VGS @ -4.5V @ Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation 2 @Ta= 25 PD Power Dissipation 2 @Ta = 70 PD Linear Derating Factor Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Junction-to-Drain Lead R JL Maximum Junction-to-Ambient 2 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 When mounted on 1 inch square copper board. Rating -12 -7.8 -6.2 -39 2.0 1.3 16 8.0 -55 to + 150 20 62.5 Unit V A W W W/ V /W /W www.kexin.com.cn 1 1 page

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PDF KRF7325 Data sheet ( Hoja de datos )