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PDF KRF7319 Data sheet ( Hoja de datos )

Número de pieza KRF7319
Descripción HEXFET Power MOSFET
Fabricantes Guangdong Kexin Industrial 
Logotipo Guangdong Kexin Industrial Logotipo



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No Preview Available ! KRF7319 Hoja de datos, Descripción, Manual

SMD Type
HEXFET Power MOSFET
KRF7319
Features
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current *5 Ta = 25
ID
Continuous Drain Current *5 Ta = 70
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Power Dissipation
Power Dissipation
@Ta= 25 *4
@Ta= 70 *4
PD
Single Pulse Avalanche Energy
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Peak Diode Recovery dv/dt *2
dv/dt
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *4
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
N-Channel
P-Channel
30 -30
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140
4.0 -2.8
0.20
5.0 -5
20
-55 to + 150
62.5
*2 N-Channel ISD 4.0A, di/dt 74A/ s, VDD V(BR)DSS, TJ 150
P-Channel ISD -2.8A, di/dt 150A/ s, VDD V(BR)DSS, TJ 150
*3 N-Channel Starting TJ = 25 , L = 10mH RG = 25 , IAS = 4.0A.
P-Channel Starting TJ = 25 , L = 35mH RG = 25 , IAS = -2.8A.
*4 Surface mounted on FR-4 board, t 10sec.
Unit
V
A
W
mJ
A
mJ
V/ ns
V
/W
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