(PDF) KRF7105 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7105
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching ICIC Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current VGS @ 10V Ta = 25 ID Continuous Drain Current VGS @ 10V Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation @Tc= 25 PD Linear Derating Factor Peak Diode Recovery dv/dt 2 dv/dt Gate-to-Source Voltage VGS Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient3 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. N-Channel P-Channel 3.5 -2.3 2.8 -1.8 14 -10 2.0 0.016 3.0 -3.0 20 -55 to + 150 62.5 2 N-Channel ISD 3.5A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150 P-Channel ISD -2.3A, di/dt 90A/ s, VDD V(BR)DSS, TJ 150 3 Surface mounted on FR-4 board, t 10sec. Unit A W W/ V/ ns V /W www.kexin.com.cn 1 1 page

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PDF KRF7105 Data sheet ( Hoja de datos )