(PDF) KRF7104 Datasheet - HEXFET Power MOSFET

Número de pieza	KRF7104
Descripción	HEXFET Power MOSFET
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type HEXFET Power MOSFET KRF7104 ICIC Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Continuous Drain Current, VGS @ 10V @ Ta = 25 ID Continuous Drain Current, VGS @ 10V @ Ta = 70 ID Pulsed Drain Current 1 IDM Power Dissipation @TC= 25 PD Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt 3 dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum Junction-to-Ambient 2 R JA 1 Repetitive rating; pulse width limited by max. junction temperature. 2 Surface mounted on FR-4 board, t 10sec. 3 ISD -2.3A, di/dt 100A/ s, VDD V(BR)DSS,TJ 150 Rating -2.3 -1.8 -10 2.0 0.016 12 -3 -55 to + 150 62.5 Unit A W W/ V V/nS /W www.kexin.com.cn 1 1 page

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PDF KRF7104 Data sheet ( Hoja de datos )