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Número de pieza | FDZ1905PZ | |
Descripción | Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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July 2008
FDZ1905PZ
Common Drain P-Channel 1.5V PowerTrench® WL-CSP MOSFET
–20V, –3A, 123mΩ
tm
Features
Max rS1S2(on) = 126mΩ at VGS = –4.5V, IS1S2 = –1A
Max rS1S2(on) = 141mΩ at VGS = –2.5V, IS1S2 = –1A
Max rS1S2(on) = 198mΩ at VGS = –1.8V, IS1S2 = –1A
Max rS1S2(on) = 303mΩ at VGS = –1.5V, IS1S2 = –1A
Occupies only 1.5 mm2 of PCB area, less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 4kV (Note 3)
RoHS Compliant
General Description
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features two common drain
P-channel MOSFETs, which enables bidirectional current flow,
on Fairchild’s advanced 1.5V PowerTrench® process with state
of the art “low pitch” WL-CSP packaging process, the
FDZ1905PZ minimizes both PCB space and rS1S2(on). This
advanced WL-CSP MOSFET embodies a breakthrough in
packaging technology which enables the device to combine
excellent thermal transfer characteristics, ultra-low profile
packaging, low gate charge, and low rS1S2(on) .
Applications
Battery management
Load switch
Battery protection
PIN1
S1
S1 G1
G2 S2
S2
S1
G1
G2
BOTTOM
TOP
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
VGS
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Voltage
Gate to Source Voltage
Source1 to Source2 Current -Continuous TA = 25°C
-Pulsed
Power Dissipation (Steady State)
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–3
–15
1.5
0.9
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
83
140
°C/W
Device Marking
5
Device
FDZ1905PZ
Package
WL-CSP 1.0X1.5
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2008 Fairchild Semiconductor Corporation
FDZ1905PZ Rev.B
1
www.fairchildsemi.com
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FDZ1905PZ Rev.B
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5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDZ1905PZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDZ1905PZ | Common Drain P-Channel 1.5V PowerTrench WL-CSP MOSFET | Fairchild Semiconductor |
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