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PDF DMN4030LK3 Data sheet ( Hoja de datos )

Número de pieza DMN4030LK3
Descripción New Generation MOSFET
Fabricantes Diodes 
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Product Summary
V(BR)DSS
40V
RDS(on)
30mΩ @ VGS= 10V
50mΩ @ VGS= 4.5V
ID
TA = 25°C
13.7A
10.6A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Backlighting
DC-DC Converters
Power management functions
A Product Line of
Diodes Incorporated
DMN4030LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features and Benefits
Low on-resistance
Fast switching speed
“Green” component and RoHS compliant (Note 1)
Mechanical Data
Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Below
Ordering Information: See Below
Weight: 0.33 grams (approximate)
DD
TOP VIEW
D
GS
PIN OUT -TOP VIEW
G
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN4030LK3-13
Marking
N4030L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
YYWW
N4030L
= Manufacturer’s Marking
N4030L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
DMN4030LK3
Document Revision: 1
1 of 8
www.diodes.com
July 2009
© Diodes Incorporated

1 page




DMN4030LK3 pdf
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Typical Characteristics
A Product Line of
Diodes Incorporated
DMN4030LK3
10V T = 25°C
4.5V
10 4V
3.5V
1
V
GS
3V
0.1
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
T = 150°C
10
1
10V
4V
3.5V
3V
2.5V
0.1
2V
V
GS
0.01
0.1 1 10
V Drain-Source Voltage (V)
DS
Output Characteristics
V = 10V
DS
1
0.1 T = 150°C
0.01
T = 25°C
1E-3
123
V Gate-Source Voltage (V)
GS
Typical Transfer Characteristics
1.6
V = 10V
GS
1.4 I = 12A
D
1.2
R
DS(on)
1.0
0.8
V
GS(th)
0.6
V =V
GS DS
I = 250uA
D
0.4
-50 0 50 100 150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
10
T = 25°C
3V
3.5V
V
GS
1
4V
4.5V
0.1
10V
0.01
0.01
0.1
1
10
I Drain Current (A)
D
On-Resistance v Drain Current
10
T = 150°C
1
0.1 T = 25°C
0.01
Vgs = 0V
1E-3
0.2 0.4 0.6 0.8
V Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
1.0
DMN4030LK3
Document Revision: 1
5 of 8
www.diodes.com
July 2009
© Diodes Incorporated

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