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PDF BC846BPN Data sheet ( Hoja de datos )
| Número de pieza | BC846BPN | |
| Descripción | 100 MA NPN/PNP General-purpose Transistor | |
| Fabricantes | NXP Semiconductors | |
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BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
Rev. 01 — 17 July 2009
Product data sheet
1. Product profile
1.1 General description
NPN/PNP general-purpose transistor pair in a very small Surface-Mounted Device (SMD)
plastic package.
Table 1. Product overview
Type number Package
NXP
BC846BPN
SOT363
JEITA
SC-88
NPN/NPN
complement
BC846BS
PNP/PNP
complement
BC856BS
1.2 Features
I Low collector capacitance
I Low collector-emitter saturation voltage
I Closely matched current gain
I Reduces number of components and board space
I No mutual interference between the transistors
I AEC-Q101 qualified
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
VCEO
collector-emitter voltage
IC collector current
TR1 (NPN)
open base
- - 65 V
- - 100 mA
hFE DC current gain
TR2 (PNP)
VCE = 5 V; IC = 2 mA
200 300 450
hFE DC current gain
VCE = −5 V;
IC = −2 mA
200 290 450
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BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
TR1 (NPN)
ICBO
IEBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
emitter-base cut-off VEB = 6 V; IC = 0 A
current
hFE
VCEsat
VBEsat
VBE
Cc
DC current gain
VCE = 5 V
IC = 10 µA
IC = 2 mA
collector-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter
saturation voltage
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
base-emitter voltage VCE = 5 V
IC = 2 mA
IC = 10 mA
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
Ce emitter capacitance VEB = 0.5 V; IC = ic = 0 A;
f = 1 MHz
fT transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
NF noise figure
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ;
f = 10 Hz to 15.7 kHz
VCE = 5 V; IC = 0.2 mA;
RS = 2 kΩ; f = 1 kHz;
B = 200 Hz
TR2 (PNP)
ICBO
IEBO
collector-base cut-off VCB = −50 V; IE = 0 A
current
VCB = −30 V; IE = 0 A;
Tj = 150 °C
emitter-base cut-off VEB = −6 V; IC = 0 A
current
hFE DC current gain
VCEsat collector-emitter
saturation voltage
VCE = −5 V
IC = −10 µA
IC = −2 mA
IC = −10 mA;
IB = −0.5 mA
IC = −100 mA; IB = −5 mA
Min Typ Max Unit
- - 15 nA
- - 5 µA
- - 100 nA
- 280 -
200 300 450
- 55 100 mV
- 200 300 mV
- 755 850 mV
- 1000 - mV
580 650 700 mV
- - 770 mV
- 1.9 - pF
- 11 - pF
100 - - MHz
- 1.9 - dB
- 3.1 - dB
- - −15 nA
- - −5 µA
- - −100 nA
- 270 -
200 290 450
- −55 −100 mV
- −200 −300 mV
BC846BPN_1
Product data sheet
Rev. 01 — 17 July 2009
© NXP B.V. 2009. All rights reserved.
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BC846BPN
65 V, 100 mA NPN/PNP general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.2
1.8
65
4 0.45
0.15
1.1
0.8
2.2 1.35
2.0 1.15
pin 1
index
12
0.65
1.3
Dimensions in mm
Fig 19. Package outline SOT363 (SC-88)
3
0.3
0.2
0.25
0.10
06-03-16
10. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3 000
10 000
BC846BPN SOT363 4 mm pitch, 8 mm tape and reel; T1
[2] -115
-135
4 mm pitch, 8 mm tape and reel; T2
[3] -125
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
BC846BPN_1
Product data sheet
Rev. 01 — 17 July 2009
© NXP B.V. 2009. All rights reserved.
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