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Número de pieza | EIC8596-8 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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UPDATED 08/21/2007
EIC8596-8
8.50-9.60GHz 8-Watt Internally-Matched Power FET
FEATURES
• 8.50 –9.60GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -43 dBc IM3 at Po = 28.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 8.50-9.60GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 9.60GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-40
TYP
39.5
7.5
30
2200
-43
3700
-2.5
2.5
MAX
±0.6
2600
UNITS
dBm
dB
dB
%
mA
dBc
4300
-4.0
3.5
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
96mA
Igr Reverse Gate Current -19.2mA
Pin Input Power 39.0dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
43W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
43W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EIC8596-8.PDF ] |
Número de pieza | Descripción | Fabricantes |
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EIC8596-2 | Internally Matched Power FET | Excelics Semiconductor |
EIC8596-4 | Internally Matched Power FET | Excelics Semiconductor |
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