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PDF EIC7785-8 Data sheet ( Hoja de datos )
| Número de pieza | EIC7785-8 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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www.DataSheet4U.com
UPDATED 08/21/2007
EIC7785-8
7.70-8.50GHz 8-Watt Internally-Matched Power FET
FEATURES
• 7.70–8.50GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.5 dBm Output Power at 1dB Compression
• 8.5 dB Power Gain at 1dB Compression
• 34% Power Added Efficiency
• -46 dBc IM3 at PO = 28.5 dBm SCL
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 7.70-8.50GHz
Id1dB
IM3
Drain Current at 1dB Compression f = 7.70-8.50GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 8.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 40 mA
RTH Thermal Resistance3
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN TYP MAX UNITS
38.5 39.5
dBm
7.5 8.5
dB
±0.6
dB
34
2200
2600
%
mA
-43 -46
dBc
4000
-2.5
3.5
4500
-4.0
4.0
mA
V
oC/W
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
PARAMETERS
ABSOLUTE1
CONTINUOUS2
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
-5V
Igf Forward Gate Current
96mA
Igr Reverse Gate Current -19.2mA
Pin Input Power
39dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
28.8mA
-4.8mA
@ 3dB Compression
175C
-65C to +175C
37.5W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2007
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet EIC7785-8.PDF ] | |
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