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Número de pieza | EIC7177-10 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
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EIC7177-10
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
FEATURES
• 7.10 – 7.70 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +40.5 dBm Output Power at 1dB Compression
• 9 dB Power Gain at 1dB Compression
• 35% Power Added Efficiency
• -46 dBc IM3 at Po = 29.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC7177-10 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 7.10-7.70GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
f = 7.10-7.70GHz
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 7.10-7.70GHz
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
f = 7.10-7.70GHz
Id1dB
Drain Current at 1Db Compression f = 7.10-7.70GHz
Output 3rd Order Intermodulation Distortion
IM3 ∆f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 7.70 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 60 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
39.5
8.0
-43
TYP
40.5
9.0
35
3200
-46
5800
-2.5
2.5
MAX
UNITS
dBm
dB
±0.6 dB
3600
%
mA
dBc
6400
-4.0
3.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised October 2003
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet EIC7177-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC7177-10 | Internally Matched Power FET | Excelics Semiconductor |
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