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PDF EIC5972-12 Data sheet ( Hoja de datos )

Número de pieza EIC5972-12
Descripción Internally Matched Power FET
Fabricantes Excelics Semiconductor 
Logotipo Excelics Semiconductor Logotipo



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No Preview Available ! EIC5972-12 Hoja de datos, Descripción, Manual

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UPDATED 11/10/2006
EIC5972-12
5.90-7.20 GHz 12-Watt Internally Matched Power FET
FEATURES
5.90– 7.20GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+41.5 dBm Output Power at 1dB Compression
9.0 dB Power Gain at 1dB Compression
36% Power Added Efficiency
-46 dBc IM3 at Pout = 30.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
945 .803
Excelics
EIC5972-12
.079 MIN
YYWW
SN
.024
.079 MIN
.168
.055
.315
.685
.617
ALL DIMENSIONS IN INCHES
.004
.095
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression
f = 5.90-7.20GHz
VDS = 10 V, IDSQ 3200mA
Gain at 1dB Compression
f = 5.90-7.20GHz
VDS = 10 V, IDSQ 3200mA
Gain Flatness
f = 5.90-7.20GHz
VDS = 10 V, IDSQ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 3200mA
f = 5.90-7.20GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 5.90-7.20GHz
Output 3rd Order Intermodulation Distortion
f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 7.20GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 60 mA
Note: 1) Tested with 50 Ohm gate resistor.
2) S.C.L. = Single Carrier Level.
MIN
40.5
8.0
TYP
41.5
9.0
36
3400
MAX
±0.8
3800
UNITS
dBm
dB
dB
%
mA
-43 -46
dBc
6000
7500
mA
-2.5 -4.0
V
2.5 3.0 oC/W
3) Overall Rth depends on case mounting.
MAXIMUM RATING AT 25 oC 1,2
SYMBOLS
PARAMETERS
ABSOLUTE
CONTINUOUS
Vds
Drain-Source Voltage
15
Vgs
Gate-Source Voltage
-5
Igsf Forward Gate Current
129.6mA
Igsr
Reverse Gate Current
-21.6mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
40.5dBm
175 oC
-65 to +175 oC
Pt Total Power Dissipation
50W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
10V
-4V
43.2mA
-7.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
50W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006

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