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PDF EIC4450-18 Data sheet ( Hoja de datos )
| Número de pieza | EIC4450-18 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EIC4450-18 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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UPDATED: 10/18/2007
EIC4450-18
4.40-5.00GHz 18-Watt Internally Matched Power FET
2X 0.079 MIN
4X 0.102
FEATURES
• 4.40– 5.00GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +42.5 dBm Output Power at 1dB Compression
• 9.5 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• -46 dBc IM3 at Po = 31.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
0.945 0.803
Excelics
EIC4450-18
YYWW
SN
0.010
0.158
0.055
0.315
0.685
0.617
0.024
0.580
0.004
0.095
0.055
0.168
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Gain at 1dB Compression
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Gain Flatness
f = 4.40-5.00GHz
VDS = 10 V, IDSQ ≈ 4500mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 4500mA
f = 4.40-5.00GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 4.40-5.00GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 31.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 5.00GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 84 mA
Note: 1. Tested with 50 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN
41.5
8.5
-43
TYP
42.5
9.5
33
4800
-46
9000
-2.5
1.6
MAX
±0.8
5500
UNITS
dBm
dB
dB
%
mA
dBc
13000
-4.0
1.8
mA
V
oC/W
ABSOLUTE MAXIMUM RATING
SYMBOLS
PARAMETERS
ABSOLUTE
Vds Drain-Source Voltage
15V
Vgs Gate-Source Voltage
Igf Forward Gate Current
-5V
105mA
Igr Reverse Gate Current -21.5mA
Pin Input Power 41.5dBm
Tch Channel Temperature
175C
Tstg
Storage Temperature
-65C to +175C
Pt Total Power Dissipation
83W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS
10V
-4V
31.6mA
-5.2mA
@ 3dB Compression
175C
-65C to +175C
83W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet EIC4450-18.PDF ] | |
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