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PDF EIC1415-3 Data sheet ( Hoja de datos )
| Número de pieza | EIC1415-3 | |
| Descripción | Internally Matched Power FET | |
| Fabricantes | Excelics Semiconductor | |
| Logotipo |  |
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UPDATED 11/22/2004
EIC1415-3
14.40 – 15.35GHz 3-Watt Internally Matched Power FET
FEATURES
• 14.40-15.35 GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +34.5 dBm Output Power at 1dB Compression
• 6.0 dB Power Gain at 1dB Compression
• 25% Power Added Efficiency
• -42 dBc IM3 at Po = 23.5 dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIC1415-3
YM
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
MIN TYP MAX
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 800mA
Gain at 1dB Compression
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 800mA
Gain Flatness
f = 14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 800mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 800mA
f = 14.40-15.35GHz
33.5
5.0
34.5
6.0
25
±0.6
Id1dB
IM3
Drain Current at 1dB Compression f = 14.40-15.35GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 23.5 dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 15.35GHz
-38
900 1100
-42*
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
1400 1800
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 15 mA
-2.5 -4.0
8.0 9.0
Notes:
1.
*
Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
These devices are available screened for IM3 performance. Please contact factory with your requirement.
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
30 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
14 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) – (POUT – PIN).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 1
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised December 2004
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet EIC1415-3.PDF ] | |
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