|
|
Número de pieza | EIC0910A-8 | |
Descripción | Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIC0910A-8 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! www.DataSheet4U.com
ISSUED DATE: 10/09/2007
EIC0910A-8
9.20-10.00 GHz 8-Watt Internally Matched Power FET
FEATURES
• 9.20-10.0GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +39.0 dBm Output Power at 1dB Compression
• 7.5 dB Power Gain at 1dB Compression
• 30% Power Added Efficiency
• -46 dBc IM3 at PO = 28dBm SCL
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression
f = 9.20-10.0GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain at 1dB Compression
f = 9.20-10.0GHz
VDS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
f = 9.20-10.0GHz
VDS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 2200mA
f = 9.20-10.0GHz
Id1dB
IM3
Drain Current at 1dB Compression
f = 9.20-10.0GHz
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 28dBm S.C.L2
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 10.0GHz
IDSS
Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance3
VDS = 3 V, IDS = 40 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
38.5
6.5
-43
TYP
39.0
7.5
30
2300
-46
4000
-2.5
3.5
MAX
±0.6
2600
5000
-4.0
4.0
UNITS
dBm
dB
dB
%
mA
dBc
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
15V
Vgs
Gate-Source Voltage
-5V
Igsf
Forward Gate Current
96mA
Igsr
Reserve Gate Current
-19.2mA
Pin
Tch
Tstg
Input Power
Channel Temperature
Storage Temperature
38.5dBm
175 oC
-65 to +175 oC
Pt
Total Power Dissipation
38W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
10V
-4.5V
28.8mA
-4.8mA
@ 3dB Compression
175 oC
-65 to +175 oC
38W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 2
Revised October 2007
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIC0910A-8.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIC0910A-8 | Internally Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |