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PDF K3662 Data sheet ( Hoja de datos )
| Número de pieza | K3662 | |
| Descripción | MOSFET ( Transistor ) - 2SK3662 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3662 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3662
www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSII)
2SK3662
Switching Regulator, DC−DC Converter, Motor Drive
Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 9.4 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 55 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement mode : Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
60
±20
35
105
35
204
35
3.5
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
3.57
62.5
°C/ W
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 227 μH, IAR = 35 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2006-11-17
1 page  
www.DataSheet4U.com
rth – tw
3
1
Duty = 0.5
0.3 0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
0.00
10 μ
Single pulse
100 μ
1m
10 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 3.57°C/W
100 m
1
10
Pulse width tw (S)
2SK3662
Safe operating area
300
ID max (pulsed)*
100
ID max (continuous)
30
t = 1 ms*
t = 10 ms*
10
3
1
* Single nonrepetitive pulse
0.3 Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.1
1
VDSS max
10
Drain-source voltage VDS (V)
100
EAS – Tch
250
200
150
100
50
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 25 V, L = 227 μH
Waveform
ΕAS
=
1
2
⋅
L
⋅ I2
⋅
⎜⎛
⎜⎝
BVDSS
BVDSS − VDD
⎟⎞
⎟⎠
5 2006-11-17
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3662.PDF ] | |
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