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PDF BLS6G2731-120 Datasheet ( Hoja de datos )

Número de pieza BLS6G2731-120
Descripción LDMOS S-band Radar Power Transistor
Fabricantes NXP 
Logotipo NXP Logotipo

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BLS6G2731-120 Hoja de datos, Descripción, Manual
www.DataSheet4U.com
BLS6G2731-120;
BLS6G2731S-120
LDMOS S-band radar power transistor
Rev. 01 — 14 November 2008
Product data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 120
13.5 48
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %:
N Output power = 120 W
N Power gain = 13.5 dB
N Efficiency = 48 %
I Easy power control
I Integrated ESD protection
I High flexibility with respect to pulse formats
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (2.7 GHz to 3.1 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)

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BLS6G2731-120 pdf
www.DNatXaSPheSete4Um.coicmonductors
BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
15
Gp
(dB)
13
11
7.2 Graphs
(1)
(3)
(2)
001aaj091
15
Gp
(dB)
13
11
001aaj092
(1)
(3)
(2)
99
7
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 2. Power gain as a function of load power; typical
values
7
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 3. Power gain as a function of load power; typical
values
60
ηD
(%)
40
001aaj093
(1)
(2)
(3)
60
ηD
(%)
40
001aaj094
(1)
(2)
(3)
20 20
0
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 4. Drain efficiency as a function of load power;
typical values
0
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
Fig 5. Drain efficiency as a function of load power;
typical values
BLS6G2731-120_6G2731S-120_1
Product data sheet
Rev. 01 — 14 November 2008
© NXP B.V. 2008. All rights reserved.
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BLS6G2731-120; BLS6G2731S-120
LDMOS S-band radar power transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet Development
Preliminary [short] data sheet Qualification
Product [short] data sheet
Production
Definition
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLS6G2731-120_6G2731S-120_1
Product data sheet
Rev. 01 — 14 November 2008
© NXP B.V. 2008. All rights reserved.
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