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PDF 10XS3435 Data sheet ( Hoja de datos )

Número de pieza 10XS3435
Descripción Quad High Side Switch
Fabricantes Freescale Semiconductor 
Logotipo Freescale Semiconductor Logotipo



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No Preview Available ! 10XS3435 Hoja de datos, Descripción, Manual

Freescale Semiconductor
Advance Information
www.DataSheet4U.com
Quad High Side Switch
(Dual 10mΩ, Dual 35mΩ)
Document Number: MC10XS3435
Rev. 5.0, 10/2008
10XS3435
The 10XS3435 is one in a family of devices designed for low-voltage
automotive lighting applications. Its four low RDS(ON) MOSFETs (dual
10mΩ/dual 35mΩ) can control four separate 55W / 28W bulbs, and/or
Xenon modules, and/or LEDs.
Programming, control and diagnostics are accomplished using a
16-bit SPI interface. Its output with selectable slew-rate improves
electromagnetic compatibility (EMC) behavior. Additionally, each
output has its own parallel input or SPI control for pulse-width
modulation (PWM) control if desired. The 10XS3435 allows the user to
program via the SPI the fault current trip levels and duration of
acceptable lamp inrush. The device has fail-safe mode to provide fail-
safe functionality of the outputs in case of MCU damaged.
HIGH SIDE SWITCH
Features
• Four protected 10mΩ and 35mΩ high side switches (at 25°C)
• Operating voltage range of 6.0V to 20V with sleep current <
5.0μA, extended mode from 4.0V to 28V
• 8MHz 16-bit 3.3V and 5V SPI control and status reporting with
daisy chain capability
• PWM module using external clock or calibratable internal
oscillator with programmable outputs delay management
• Smart over-current shutdown, severe short-circuit, over-
temperature protections with time limited autoretry, and fail-safe
mode in case of MCU damage
• Output OFF or ON open-load detection compliant to bulbs or leds
and short to battery detection. analog current feedback with
selectable ratio and board temperature feedback.
PNA SUFFIX (PB-FREE)
98ARL10596D
24-PIN PQFN
ORDERING INFORMATION
Device
PC10XS3435BPNA
Temperature
Range (TA)
-40°C to 125°C
Package
24 PQFN
VDD
I/O
SCLK
CS
SI
I/O
MCU SO
I/O
I/O
I/O
I/O
A/D
GND
VDD VPWR VDD
VPWR
10XS3435
VDD
VPWR
WAKE
FS
SCLK
CS
SO
RST
SI
IN0
IN1
IN2
IN3
CSNS
FSI
HS0
HS1
HS2
HS3
GND
LOAD
LOAD
LOAD
LOAD
Figure 1. 10XS3435 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2008. All rights reserved.

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10XS3435 pdf
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ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
VPWR Supply Voltage Range
Load Dump at 25°C (400 ms)
Maximum Operating Voltage
Reverse Battery
VPWR(SS)
41
28
-18
V
VDD Supply Voltage Range
Input/Output Voltage
WAKE Input Clamp Current
CSNS Input Clamp Current
HS [0:3] Voltage
Positive
Negative
Output Current(1)
HS[0,1] Output Clamp Energy using single pulse method(2)
HS[2,3] Output Clamp Energy using single pulse method(2)
ESD Voltage(3)
Human Body Model (HBM) for HS[0:3], VPWR and GND
Human Body Model (HBM) for other pins
Charge Device Model (CDM)
Corner Pins (1, 13, 19, 21)
All Other Pins (2-12, 14-18, 20, 22-24)
VDD
(4)
ICL(WAKE)
ICL(CSNS)
VHS[0:3]
IHS[0:3]
ECL [0:1]
ECL [2:3]
VESD1
VESD2
VESD3
VESD4
-0.3 to 5.5
-0.3 to VDD+0.3
2.5
2.5
41
-24
6.0
100
35
± 8000
± 2000
± 750
± 500
V
V
mA
mA
V
A
mJ
mJ
V
THERMAL RATINGS
Operating Temperature
Ambient
Junction
°C
TA -40 to 125
TJ -40 to 150
Storage Temperature
TSTG
-55 to 150
°C
Notes
1. Continuous high side output current rating so long as maximum junction temperature is not exceeded. Calculation of maximum output
current using package thermal resistance is required.
2. Active clamp energy using single-pulse method (L = 2mH, RL = 0Ω, VPWR = 14V, TJ = 150°C initial).
3. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100pF, RZAP = 1500Ω), the Machine Model (MM)
(CZAP = 200pF, RZAP = 0Ω), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF).
4. Input / Output pins are: IN[0:3], RSTB, FSI, CSNS, SI, SCLK, CSB, SO, FSB
Analog Integrated Circuit Device Data
Freescale Semiconductor
10XS3435
5

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10XS3435 arduino
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
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Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 6.0V VPWR 20V, 3.0V VDD 5.5V, -40°C TA 125°C, GND = 0V unless otherwise
noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise
noted.
Characteristic
Symbol Min Typ Max Unit
OUTPUTS HS0 TO HS3 (CONTINUED)
HS[2,3] Output Over-current Detection Levels (6.0V < VHS[0:3] < 20V)
HS[2,3] Current Sense Ratio (6.0V < HS[0:3] < 20V, CSNS < 5.0V)(17)
CSNS_ratio bit = 0
CSNS_ratio bit = 1
HS[2,3] Current Sense Ratio (CSR0) Accuracy (6.0V < VHS[0:3] < 20V)
Output Current
6.25A
2.5A
1.5A
0.75A
OCHI1_1
OCHI2_1
OC1_1
OC2_1
OC3_1
OC4_1
OCLO4_1
OCLO3_1
OCLO2_1
OCLO1_1
CSR0_1
CSR1_1
CSR0_0_ACC
HS[2,3] Current
20V)(18)
Recopy
Accuracy
with
one
calibration
point
(6.0V
<
VHS[0:3]
<
Output Current
2.5A
CSR0_0_ACC(
CAL)
Notes
17. Current sense ratio = ICSNS / IHS[0:3]
18. Based on statistical analysis. It is not production tested.
39.5
25.2
22.0
18.9
15.7
12.6
9.4
6.3
5.0
3.2
-12
-13
-16
-20
-5.0
47.0
30.0
26.2
22.5
18.7
15.0
11.2
7.5
6.0
4.0
1/4350
1/25500
54.5
34.8
30.5
26.1
21.7
17.4
13.0
8.7
7.0
4.8
12
13
16
20
5.0
A
%
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Analog Integrated Circuit Device Data
Freescale Semiconductor
10XS3435
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