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PDF TGA4906-SM Data sheet ( Hoja de datos )
| Número de pieza | TGA4906-SM | |
| Descripción | 4 Watt Ka-Band Packaged HPA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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TGA4906-SM
4 Watt Ka-Band Packaged HPA
Key Features
• Frequency Range: 28 - 31 GHz
• Psat: 36 dBm
• Gain: 23 dB
• Return Loss: -12 dB
• Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
• Package Dimensions: 5 x 5 x 1.19 mm
Measured Performance
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
38
37
36
35
34
33
32
31
30
28
28.5
29 29.5 30
Frequency (GHz)
Psat
P1dB
30.5 31
24
22
20
18
16
14
12
10
8
6
4
28
Gain
IRL
ORL
28.5
29 29.5 30
Frequency (GHz)
30.5
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
31
Primary Applications
• Ka-Band VSAT
Product Description
The TriQuint TGA4906-SM is a compact 4 Watt
High Power Amplifier for Ka-band applications.
The part is designed using TriQuint’s proven
standard 0.15 um gate Power pHEMT production
process. The TGA4906-SM provides a nominal 36
dBm of output power at an input power level of 14
dBm with a small signal gain of 23 dB.
The TGA4906-SM is a QFN 5x5 mm surface
mount packaged. It is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals and point
to point radio.
Lead-Free & RoHS compliant.
Evaluation boards are available upon request.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2008 © Rev -
1
1 page  
www.DataSheet4U.com
Measured Data
TGA4906-SM
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
30
27
24
21
18
15
12
9
6
3
0
20 22 24 26 28 30 32 34 36
Frequency (GHz)
0
-3
-6
-9
-12
-15
-18
-21
-24 IRL
-27 ORL
-30
20 22 24 26 28 30 32 34 36
Frequency (GHz)
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2008 © Rev -
5
5 Page 
www.DataSheet4U.com
TGA4906-SM
Recommended Assembly Board
Board is 8mil thick RO4003 with
0.5oz copper cladding.
Board is soldered on metal block
and adequate heatsinking is required
for 14 W power dissipation.
See detail
tuning on
page 12
8mils
diameter
Copper filled
vias
C1
C2 C3
R1 R2 R3
C4 C5C6
C7 C8 C9
R7 R4 R5 R6
C10
C12
C11
Part
C1, C2, C3,
C10, C11, C12
C4, C5, C6,
C7, C8, C9
R1, R2, R3,
R4, R5, R6
R7
Description
1 uF Capacitor (0603)
0.01 uF Capacitor (0402)
10 ohm Resistor (0402)
22 ohm Resistor (0402)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2008 © Rev -
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA4906-SM.PDF ] | |
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