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Número de pieza SDA-1000
Descripción GaAs Distributed Amplifier
Fabricantes RF Micro Devices 
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PreliminarySDA-1000
GaAs Distrib-
uted Amplifier
SDA-1000
GaAs DISTRIBUTED AMPLIFIER
CONFIDENTIAL: NDA REQUIRED
Die: 3.1mmx1.45mmx0.102mm
Product Description
RFMD’s SDA-1000 is a directly coupled (DC) GaAs microwave monolithic
integrated circuit (MMIC) distributed driver amplifier die designed to sup-
port a wide array of high frequency commercial, military, and space appli-
cations. They are ideal for wideband amplifier gain blocks, broadband test
equipment (ATE), military, and aerospace applications.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
9 GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
3
VG2 2
IN 1
76
4 OUT
5
Features
„ DC to 20GHz Operation
„ +26dBm PSAT
„ Gain=14dB Typical
„ Noise Figure=4dB
„ Output Voltage to 8VPP
„ 300mA Total Current
Applications
„ Military
„ Aerospace
„ Broadband ATE
„ Instrumentation
Parameter
Specification
Min. Typ.
Electrical Specifications
Operating Frequency
DC
Gain
14
Output Voltage
4
IP3 at 10GHz
36
P1dB at 10GHz
PSAT at 10GHz
Noise Figure at Mid-Band
Input Return Loss
25
26.5
4
10 15
Output Return Loss
13 15
Supply Current
300
Supply Voltage
8
*Adjust VTI between -1.5VDC to +0.2VDC to achieve IDD=300mA typical.
Max.
20
8
Unit
GHz
dB
VP-P
dBm
dBm
dBm
dB
dB
mA
VDC
Condition
TA=+25°C, VDD=+8VDC, VG2 at=+1.5VDC,
IDD = 300 mA
POUT+10dBm
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Prelim DS090602
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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