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PDF VN5E160MS-E Data sheet ( Hoja de datos )

Número de pieza VN5E160MS-E
Descripción High Side Switches
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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VN5E160MS-E
Single-channel high-side driver with analog
for automotive applications
Features
Max supply voltage
Operating voltage range
Max ON-state resistance
(per ch.)
VCC
41 V
VCC 4.5 V to 28 V
RON 160 mΩ
Current limitation (typ)
OFF-state supply current
ILIMH
IS
10 A
2 µA(1)
1. Typical value with all loads connected.
General
– Inrush current active management by
power limitation
– Very low standby current
– 3.0 V CMOS compatible inputs
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
european directive
– Very low current sense leakage
Diagnostic functions
– Proportional load current sense
– High-precision current sense for
wide currents range
– Current sense disable
– Overload and short to ground
(power limitation) indication
– Thermal shutdown indication
Protections
– Undervoltage shutdown
– Overvoltage clamp
– Load current limitation
– Self-limiting of fast thermal transients
– Protection against loss of ground and loss
of VCC
– Overtemperature shutdown with
autorestart (thermal shutdown)
– Reverse battery protected (see Figure 29)
SO-8
– Electrostatic discharge protection
Applications
All types of resistive, inductive and capacitive
loads
Suitable as LED driver
Description
The VN5E160MS-E is a single-channel high-side
driver manufactured in the ST proprietary
VIPower M0-5 technology and housed in the tiny
SO-8 package. The VN5E160MS-E is designed to
drive 12 V automotive grounded loads delivering
protection, diagnostics and easy 3 V and 5 V
CMOS compatible interface with any
microcontroller.
The device integrates advanced protective
functions such as load current limitation, inrush
and overload active management by power
limitation, overtemperature shut-off with
auto-restart and overvoltage active clamp.
A dedicated analog current sense pin is
associated with every output channel in order to
provide enhanced diagnostic functions including
fast detection of overload and short-circuit to
ground through power limitation indication and
overtemperature indication.
The current sensing and diagnostic feedback of
the whole device can be disabled by pulling the
CS_DIS pin high to allow sharing of the external
sense resistor with other similar devices.
June 2009
Doc ID 15730 Rev 1
1/35
www.st.com
1

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VN5E160MS-E pdf
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Block diagram and pin configuration
1 Block diagram and pin configuration
Figure 1. Block diagram
Signal Clamp
Undervoltage
IN
Control & Diagnostic
Power
Clamp
DRIVER
Over
temp.
Current
Limitation
VON
Limitation
CS_
DIS
CS
LOGIC
VSENSEH
Current
Sense
OVERLOAD PROTECTION
(ACTIVE POWER LIMITATION)
VCC
OUT
GND
Table 1. Pin function
Name
Function
VCC
OUT
GND
IN
Battery connection
Power output
Ground connection. Must be reverse battery protected by an external
diode/resistor network
Voltage-controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
CS Analog current sense pin, delivers a current proportional to the load current
CS_DIS
Active high CMOS compatible pin, to disable the current sense pin
Doc ID 15730 Rev 1
5/35

5 Page





VN5E160MS-E arduino
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Electrical specifications
Table 9. Current sense (8 V < VCC < 18 V)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
K0 IOUT/ISENSE
IOUT = 0.025 A, VSENSE = 0.5 V 265 490 715
Tj = -40 °C to 150 °C
K1 IOUT/ISENSE
IOUT = 0.35 A, VSENSE = 0.5 V
Tj = -40 °C to 150 °C
355 465 575
Tj = 25 °C to 150 °C
385 465 545
dK1/K1(1)
Current sense ratio drift IOUT =0.35 A, VSENSE = 0.5 V
Tj = -40 °C to 150 °C
-11
+11
K2 IOUT/ISENSE
IOUT = 0.5 A, VSENSE = 4 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
380 455 530
400 455 510
dK2/K2(1)
Current sense ratio drift IOUT = 0.5 A;
Tj = -40 °C to 150 °C
-8 +8
K3 IOUT/ISENSE
IOUT = 1.5 A, VSENSE = 4 V
Tj = -40 °C to 150 °C
Tj = 25 °C to 150 °C
420 455 490
420 455 480
dK3/K3(1)
Current sense ratio drift IOUT = 1.5 A;
Tj = -40 °C to 150 °C
-4 +4
IOUT = 0 A, VSENSE = 0 V,
VCSD = 5 V, VIN = 0 V,
Tj = -40 °C to 150 °C
0
1
ISENSE0
Analog sense leakage
current
IOUT = 0 A, VSENSE = 0 V,
VCSD = 0 V, VIN = 5 V,
Tj = -40 °C to 150 °C
0
2
IOUT = 1 A, VSENSE = 0 V,
VCSD = 5 V, VIN = 5 V,
Tj = -40 °C to 150 °C
0
1
Max analog sense
VSENSE output voltage
RSENSE = 10 KΩ
IOUT = 1 A;
5
%
%
%
µA
V
VSENSEH(2)
Analog sense output
voltage in fault condition
VCC = 13 V, RSENSE = 3.9 KΩ
8
V
ISENSEH(2)
Analog sense output
current in fault condition
VCC = 13 V, VSENSE = 5 V
Delay response time
tDSENSE1H from falling edge of
CS_DIS pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE = 90% of ISENSE max
(see Figure 4)
Delay response time
tDSENSE1L from rising edge of
CS_DIS pin
VSENSE < 4 V,
0.025 A < IOUT < 1.5 A
ISENSE = 10% of ISENSE max
(see Figure 4)
9 mA
40 100 µs
5 20 µs
Doc ID 15730 Rev 1
11/35

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