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PDF STU10NM60N Data sheet ( Hoja de datos )

Número de pieza STU10NM60N
Descripción Power MOSFETs
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! STU10NM60N Hoja de datos, Descripción, Manual

STD10NM60N, STF10NM60N,
STP10NM60N, STU10NM60N
N-channel 600 V, 0.53 typ., 10 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
7$%


DPAK
7$%



TO-220



TO-220FP
7$%
IPAK



Features
Order code
VDS @TJ
max.
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
650 V
RDS(on)
max.
0.55
ID PTOT
10 A
70 W
25 W
70 W
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Figure 1. Internal schematic diagram
Applications
' 7$%
Switching applications
Description
* 
6 
Order code
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Table 1. Device summary
Marking
Package
Packing
STD10NM60N
STF10NM60N
STP10NM60N
STU10NM60N
10NM60N
10NM60N
10NM60N
10NM60N
DPAK
TO-220FP
TO-220
IPAK
Tape and reel
Tube
Tube
Tube
December 2015
This is information on a product in full production.
DocID028726 Rev 1
1/28
www.st.com

1 page




STU10NM60N pdf
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 4 A,
RG = 4.7 , VGS = 10 V
(see Figure 16)
Min. Typ. Max. Unit
- 10 - ns
- 12 - ns
- 32 - ns
- 15 - ns
Table 8. Source-drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
-8
A
32
- 1.3 V
- 250
ns
- 2.12
µC
17 A
- 315
ns
2.6 µC
16.5 A
DocID028726 Rev 1
5/28
28

5 Page





STU10NM60N arduino
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Package information
Dim.
A
A1
A2
b
b4
c
c2
D
D1
E
E1
e
e1
H
L
(L1)
L2
L4
R
V2
Table 9. DPAK (TO-252) type A mechanical data
mm
Min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
4.95
6.40
4.60
2.16
4.40
9.35
1.00
2.60
0.65
0.60
Typ.
5.10
4.70
2.28
2.80
0.80
0.20
Max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
5.25
6.60
4.80
2.40
4.60
10.10
1.50
3.00
0.95
1.00
DocID028726 Rev 1
11/28
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