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PDF ZXMC6A09DN8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMC6A09DN8 | |
| Descripción | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
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ZXMC6A09DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL TAPE
WIDTH
ZXMC6A09DN8TA 7’‘ 12mm
ZXMC6A09DN8TC 13’‘ 12mm
QUANTITY
PER REEL
500 units
2500 units
DEVICE MARKING
ZXMC
6A09
SO8
Q1 = N-CHANNEL
Q2 = P-CHANNEL
PINOUT
Top view
ISSUE 3 - AUGUST 2004
1
1 page  
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ZXMC6A09DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-60
V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1.0 A VDS=-60V, VGS=0V
Gate-Body Leakage
IGSS
100 nA VGS=Ϯ20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance (1) RDS(on)
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
-1.0
V ID=-250A, VDS= VGS
0.055
0.080
⍀ VGS=-10V, ID=-3.5A
⍀ VGS=-4.5V, ID=-2.9A
9.3 S VDS=-15V,ID=-3.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
1706
111
68.0
pF
pF
VDS=-30 V, VGS=0V,
f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
2.3
29.0
59.8
28.1
20.8
41.0
4.1
6.8
ns
ns VDD =-30V, ID=-1A
ns RG 6.0Ω, VGS=-10V
ns
nC VDS=-30V,VGS=-5V,
ID=-3.5A
nC
nC
VDS=-30V,VGS=-10V,
ID=-3.5A
nC
-0.85 -0.95
30.6
41.3
V TJ=25°C, IS=-4.2A,
VGS=0V
ns TJ=25°C, IF=-2.1A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 3 - AUGUST 2004
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMC6A09DN8.PDF ] | |
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