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Número de pieza | BLF6G20-230PRN | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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BLF6G20-230PRN
Power LDMOS transistor
Rev. 01 — 2 December 2008
Objective data sheet
1. Product profile
1.1 General description
230 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1. Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
28 50 16.5 29.5
ACPR
(dBc)
−35[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 28 V and an IDq of 2000 mA:
N Average output power = 50 W
N Power gain = 16.5 dB (typ)
N Efficiency = 29.5 %
N ACPR = −35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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BLF6G20-230PRN
Power LDMOS transistor
9. Abbreviations
Table 9. Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
DPCH
Dedicated Physical CHannel
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
PDPCH
transmission Power of the Dedicated Physical CHannel
RF Radio Frequency
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 10. Revision history
Document ID
Release date
BLF6G20-230PRN_1
20081202
Data sheet status
Objective data sheet
Change notice
-
Supersedes
-
BLF6G20-230PRN_1
Objective data sheet
Rev. 01 — 2 December 2008
© NXP B.V. 2008. All rights reserved.
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Número de pieza | Descripción | Fabricantes |
BLF6G20-230PRN | Power LDMOS transistor | NXP Semiconductors |
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