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PDF L6706 Data sheet ( Hoja de datos )

Número de pieza L6706
Descripción Single-phase Switching DC-DC Controllers & Smart Regulators
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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L6706
VR11.1 single phase controller with integrated driver
Features
8-bit programmable output up to 1.60000 V -
Intel VR11.1 DAC
High current embedded driver
High output voltage accuracy
Programmable droop function
Imon output
Load transient boost LTB Technology™ to
minimize the number of output capacitors
Full differential current sense across inductor
Differential remote voltage sensing
Adjustable voltage offset
LSLess startup to manage pre-biased output
Feedback disconnection protection
Preliminary overvoltage protection
Programmable overcurrent protection
Programmable overvoltage protection
Adjustable switching frequency
SSEND and OUTEN signal
VFQFPN-40 6x6 mm package with exp. pad
Applications
VTT and VAXG rails
CPU power supply
High density DC/DC converters
VFQFPN-40 6 x 6 mm
Description
The device implements a single phase step-down
controller with integrated high current driver in a
compact 6x6 mm body package with exposed
pad.
The device embeds VR11.x DACs: the output
voltage ranges up to 1.60000 V managing D-VID
with high output voltage accuracy over line and
temperature variations.
Imon capability guarantee full compatibility with
VR11.1 enabling additional power saving
technique.
Programmable droop function allows to supply all
the latest Intel CPU rails.
Load transient boost LTB Technology™ reduces
system cost by providing the fastest response to
load transition.
The controller assures fast protection against load
over current and under / over voltage. Feedback
disconnection prevents from damaging the load in
case of disconnections in the system board.
Table 1. Device summary
In case of over-current, the system works in
constant current mode until UVP.
Order codes
Package
Packing
L6706
L6706TR
VFQFPN-40
Tray
Tape and reel
May 2009
Doc ID 15698 Rev 1
1/47
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47

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1.2 Block diagram
Figure 2. Block diagram
Principle application circuit and block diagram
SSEND
OSC / FAULT
SSOSC/
FLIMT
VID0
VID1
VID2
VID3
VID4
VID5
VID6
VID7
DIGITAL
SOFT START
PWM
LTB
LOGIC PWM
ADAPTIVE ANTI
CROSS CONDUCTION
PWM1
SSOSC
OUTEN
L6706
CONTROL LOGIC
AND PROTECTIONS
VCC
VCCDR
OCSET
INFO
+.1240V
INFO CH CURRENT
READING
+.1240V
IOCSET
20uA
OVP
DELIVERED CURRENT
OVP
COMPARATOR
+175mV
1.800V / OVP
IDROOP
LTBGAIN
CS-
CS+
OCSET
OVPSEL
IMON
VREF
GND DROP
RECOVERY
ERROR
AMPLIFIER
+.1240V
LTB OUTEN
10uA
Doc ID 15698 Rev 1
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Table 5. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
TD3
OUTEN
ΔVosc
FAULT
SS TD3 time
Output enable
Output pull-up current
Ramp amplitude
Voltage at pin OSC/FAULT
Rising thresholds voltage
Hysteresis
OUTEN to SGND
OVP and UVP Active
Reference and DAC
KVID
Output voltage accuracy
VBOOT
VIDIH
VIDIL
Boot voltage
VID thresholds
Error amplifier
VID = 1.000 V to VID = 1.600 V
FB = VOUT; FBG = GNDOUT
VID = 0.800 V to VID = 1.000 V
FB = VOUT; FBG = GNDOUT
VID = 0.500 V to VID = 0.800 V
FB = VOUT; FBG = GNDOUT
Input low
Input high
A0 EA DC gain
SR EA slew-rate
COMP = 10 pF to SGND
Differential current sensing and offset
VOCSET
KIDROOP
OCSET pin voltage
Droop current deviation from
nominal value
Rg = 1 kΩ; IDROOP = 25 μA;
KIOFFSET
IOFFSET
VOFFSET
Offset current accuracy
OFFSET current range
OFFSET pin bias
IOFFSET = 50 μA to 250 μA
IOFFSET = 0 to 250 μA
Gate drivers
tRISE UGATE High side rise time
IUGATE
RUGATE
High side source current
High side sink resistance
tRISE LGATE Low side rise time
ILGATE
RLGATE
Low side source current
Low side sink resistance
BOOT-PHASE = 12 V;
CUGATE to PHASE = 3.3 nF
BOOT-PHASE = 12 V
BOOT-PHASE = 12 V
VCCDR = 12 V;
CLGATE to PGND = 5.6 nF
VCCDR = 12 V
VCCDR = 12 V
Electrical specifications
Min. Typ. Max. Unit
50 200
μs
0.80 0.85 0.90 V
100 mV
10 μA
1.5 V
3.3 V
-0.5 - 0.5 %
-5 - +5 mV
-8 - +8 mV
1.081
0.35
0.8
V
V
V
130 dB
25 V/μs
1.120 1.260 1.400 mV
-2 - +2 μA
-5 - 5 %
0 250 μA
1.240
V
20 ns
1.5 A
1.8 Ω
25 ns
2A
1.2 Ω
Doc ID 15698 Rev 1
11/47

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