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PDF IRF8313PBF Data sheet ( Hoja de datos )

Número de pieza IRF8313PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF8313PBF Hoja de datos, Descripción, Manual

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PD - 97145
IRF8313PbF
Applications
l Load Switch
l DC/DC Conversion
Benefits
l Low Gate Charge and Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% Tested for RG
l Lead-Free (Qualified to 260°C Reflow)
l RoHS Compliant (Halogen Free)
Description
HEXFET® Power MOSFET
VDSS
RDS(on) max
Qg
30V 15.5m:@VGS = 10V 6.0nC
S2 1
G2 2
S1 3
G1 4
8 D2
7 D2
6 D1
5 D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes  through … are on page 9
Typ.
–––
–––
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Max.
42
62.5
Units
V
A
W
W/°C
°C
Units
°C/W
1
11/5/08

1 page




IRF8313PBF pdf
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IRF8313PbF
10 2.5
8 2.0 ID = 250μA
6 ID = 25μA
1.5
4
2 1.0
0
25
50 75 100 125 150
TA, Ambient Temperature (°C)
175
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Ri (°C/W) τι (sec)
0.1396039 0.000010
0.4048955 0.000030
τJ
R1R1 R2R2 R3R3 R4R4 R5R5 R6R6 R7R7 R8R8
0.5273926
1.2084906
0.000020
0.001289
τJ τa 1.5779475 0.000340
τ1
τ1
τ2 τ3 τ4 τ5 τ6 τ7 τ8 7.0394610 0.009747
τ2
τ3
τ4
τ5 τ6
τ7
τ8
18.0102679 27.798341
CiC=iτi/Ri/iRi
Notes:
33.5929564 0.575346
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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