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PDF IRFH7936PBF Data sheet ( Hoja de datos )

Número de pieza IRFH7936PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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IRFH7936PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
4.8m@VGS = 10V 17nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
PQFN 5X6 mm
Max.
30
± 20
20
16
54
160
3.1
2.0
0.025
-55 to + 150
Typ.
–––
–––
Max.
5.6
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
1 www.irf.com © 2013 International Rectifier
August 16, 2013

1 page




IRFH7936PBF pdf
IRFH7936PbF
20 2.5
15
2.0
ID = 50µA
10
1.5
5
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
τJ τJ
τ1 τ1
R 1R 1
CiC= iτ=iRi/iRi
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
R4R4 Ri (°C/W) τi (sec)
τ4 τ4
τAτA
1.6431
4.6179
16.903
0.000308
0.017766
0.9436
16.855 40.8
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2013 International Rectifier
August 16, 2013

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