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Número de pieza | IRFH7934PBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! Applications
l Control MOSFET of Sync-Buck Converters
used for Notebook Processor Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
IRFH7934PbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:3.5m @VGS = 10V 20nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
PQFN 5X6 mm
Base part number
IRFH7934PBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH7934TRPBF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
24
19
76
190
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes through
are on page 10
1 www.irf.com © 2013 International Rectifier
Typ.
–––
–––
Max.
2.9
40
Units
°C/W
August 20, 2013
1 page IRFH7934PbF
4
25
20
2.0
15 ID = 50μA
1.6
10
1.2
5
0
25
50 75 100 125
TJ , Ambient Temperature (°C)
150
0.8
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τC
Ri (°C/W)
6.955975
τι (sec)
0.065034
τ3 τ4 τ 15.08336 5.307554
τ3 τ4 1.818966 0.00141
16.08526 0.757022
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2013 International Rectifier
August 20, 2013
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFH7934PBF.PDF ] |
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IRFH7934PBF | Power MOSFET ( Transistor ) | International Rectifier |
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