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PDF IRFH3702PBF Data sheet ( Hoja de datos )

Número de pieza IRFH3702PBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFH3702PBF Hoja de datos, Descripción, Manual

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Applications
l Synchronous Buck Converter for Computer
Processor Power
l Isolated DC to DC Converters for Network and
Telecom
l Buck Converters for Set-Top Boxes
PD - 97368
IRFH3702PbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
7.1m@VGS = 10V 9.6nC
Benefits
l Low RDS(ON)
l Very Low Gate Charge
l Low Junction to PCB Thermal Resistance
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
S
DS
DS
G
D
D
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Max.
30
± 20
16
12
42
120
2.8
1.8
0.02
-55 to + 150
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
ghRθJA Junction-to-Ambient
hRθJA Junction-to-Ambient (t<10s)
Typ.
–––
–––
–––
Max.
6.0
45
44
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through † are on page 10
www.irf.com
Units
V
A
W
W/°C
°C
Units
°C/W
1
02/12/09

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IRFH3702PBF pdf
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16
14
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
IRFH3702PbF
2.5
2.0
1.5 ID = 25µA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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