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PDF IRFH7923PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH7923PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96139
IRFH7923PbF
Applications
l High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
l Optimized for Control FET Applications
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
:8.7m @VGS = 10V 8.7nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
D
D
D
D
PQFN
S
S
S
G
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
fRθJC
gRθJA
Junction-to-Case
Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Max.
30
± 20
15
12
33
120
3.0
1.9
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
8.3
42
Units
°C/W
1
3/3/08
1 page  
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IRFH7923PbF
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TJ , Junction Temperature (°C)
150
2.2
2.0
1.8
1.6 ID = 25µA
1.4
1.2
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10. Threshold Voltage Vs. Temperature
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ
τJ
τ1
τ1
R1R1 R2R2
τ2 τ2
CiC=iτi/Ri iRi
R3R3
τ3
τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
R4R4 R5R5
Ri (°C/W) τi (sec)
2.295027 0.000402
τa 7.222539 0.013524
τ4 τ5
τ4 τ5
10.88056 0.33841
11.60807 4.926
9.99673 63.0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFH7923PBF.PDF ] | |
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