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PDF IRF8252PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF8252PBF | |
| Descripción | 25V Single N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
Benefits
l Very Low Gate Charge
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l RoHS Compliant (Halogen Free)
l Low Thermal Resistance
PD - 96158
IRF8252PbF
HEXFET® Power MOSFET
VDSS RDS(on) max
Qg
:25V 2.7m @VGS = 10V 35nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Description
The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
25
±20
25
20
200
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 9
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
07/07/08
1 page  
www.DataSheet4U.com
IRF8252PbF
30
25
20
15
10
5
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
2.5
2.0 ID = 250µA
ID = 100µA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
1E-005
Ri (°C/W) τi (sec)
0.02127 0.000002
0.02040 0.000006
0.21216 0.000082
0.79696 0.001560
R1R1
R2R2
R3R3
R4R 4
R5R5
R 6R6
R7R7
R8R8
6.31529 0.028913
τJ
τJ
τ1
τ1
τ2
τ2
τ3
τ3
τ4
τ4
τ5
τ5
τ6
τ6
τ7
τ7
τA
τA
0.45152
0.006475
26.2230 1.208856
Ci= τi/Ri
Ci= τi/Ri
16.5590 45.68988
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF8252PBF.PDF ] | |
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