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PDF LET9120 Data sheet ( Hoja de datos )
| Número de pieza | LET9120 | |
| Descripción | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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LET9120
RF power transistors, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration push-pull
■ POUT = 120 W with 18 dB gain @ 860 MHz
■ BeO free package
Description
The LET9120 is a common source N-channel
enhancement-mode lateral field-effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.6 GHz.
M246
Epoxy sealed
Figure 1. Pin connection
12
Figure 1. Device summary
Order code
LET9120
1-2 Drain
4-5 Gate
5
4
3 Source
Package
M246
Branding
LET9120
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/8
www.st.com
8
1 page  
LET9120
3 Package mechanical data
Package mechanical data
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In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet LET9120.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LET9120 | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | ST Microelectronics |
| LET9120M | LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications | ST Microelectronics |
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