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PDF C5686 Data sheet ( Hoja de datos )

Número de pieza C5686
Descripción 2SC5686
Fabricantes Panasonic 
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No Preview Available ! C5686 Hoja de datos, Descripción, Manual

Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT monitor
www.daFtaeshaetuetr4eus.com
High breakdown voltage: VCBO 2 000 V
High-speed switching: tf < 200 ns
Wide safe operation area
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCES
VCEO
VEBO
IB
IC
ICP
PC
Tj
Tstg
2 000
2 000
600
7
11
20
30
70
3.5
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
V
A
A
A
W
°C
°C
Unit: mm
15.5±0.5 φ 3.2±0.1
3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
12 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base cutoff current (Emitter open) ICBO VCB = 1 000 V, IE = 0
50 µA
VCB = 2 000 V, IE = 0
1 mA
Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0
50 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 10 A
5 10
Collector-emitter saturation voltage
VCE(sat) IC = 10 A, IB = 2.5 A
3V
Base-emitter saturation voltage
VBE(sat) IC = 10 A, IB = 2.5 A
1.5 V
Transition frequency
fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
3 MHz
Storage time
tstg IC = 10 A, Resistance loaded
3.0 µs
Fall time
tf IB1 = 2.5 A, IB2 = −5.0 A
0.2 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
SJD00303AED
1

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