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PDF LET9060S Data sheet ( Hoja de datos )
| Número de pieza | LET9060S | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de LET9060S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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LET9060S
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W with 17 dB gain @ 945 MHz / 26V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX
DESCRIPTION
The LET9060S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 1 GHz. LET9060S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. LET9060S’s
superior linearity performance makes it an ideal
solution for base station applications.
PowerSO-10RF
(straight lead)
ORDER CODE
LET9060S
BRANDING
LET9060S
PIN CONNECTION
SOURCE
GATE
DRAIN
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optmized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
March, 25 2003
Value
65
-0.5 to +15
7
170
165
-65 to +150
0.7
Unit
V
V
A
W
°C
°C
°C/W
1/10
1 page  
TYPICAL PERFORMANCE (BROADBAND)
Power Gain Vs Frequency
20
19
18
17
16
15
14
Vdd = 26 V
13 Idq = 250 mA
Pout = 60 W
12
910 920 930 940 950 960 970
f (MHz)
Input Return Loss Vs Frequency
0
-4
-8
-12
-16
Vdd = 26 V
Idq = 250 mA
Pout = 60 W
-20
910 920 930 940 950 960 970
f (MHz)
LET9060S
Efficiency Vs Frequency
80
75
70
65
60
55
50
Vdd = 26 V
45 Idq = 250 mA
Pout = 60 W
40
910 920 930 940 950 960 970
f (MHz)
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet LET9060S.PDF ] | |
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