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PDF ZXGD3102T8 Data sheet ( Hoja de datos )
| Número de pieza | ZXGD3102T8 | |
| Descripción | Power Supply Control | |
| Fabricantes | Diodes | |
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A Product Line of
Diodes Incorporated
ZXGD3102T8
ACTIVE OR’ING CONTROLLER
Description
www.datashTeehte4u.ZcoXmGD3102 is intended to drive MOSFETS
configured as ideal diode replacements. The
device is comprised of a differential amplifier
detector stage and high current driver. The
detector monitors the reverse voltage of the
MOSFET such that if body diode conduction
occurs a positive voltage is applied to the
MOSFET’s Gate pin.
Once the positive voltage is applied to the Gate
the MOSFET switches on allowing reverse current
flow. The detectors’ output voltage is then
proportional to the MOSFET Drain-Source reverse
voltage drop and this is applied to the Gate via the
driver. This action provides a rapid turn off as
current decays.
Features
• Turn-off time typically 160ns
• 180V blocking voltage
• Proportional Gate drive
• 2A Source, 5A Sink driver
• VCC Range 5-15V
• Low component count
Pin out details
Applications
• High Side OR’ing diode replacement for
Servers, Computer
• Low Side OR’ing diode replacement for
Telecoms
• Ideal diode applications
Typical Configuration
N/C
REF
GATEL
GATEH
18
27
36
45
SM8
DRAIN
BIAS
GND
V
CC
Ordering information
Device
Status
ZXGD3102T8TA Active
Package
Part Mark
Reel size
(inches)
SM8 ZXGD3102
7
Tape width
(mm)
12
Quantity per reel
1000
Issue 3, January 2009
© Diodes Incorporated 2008
1
www.diodes.com
1 page  
Operation
ZXGD3102T8
www.datashTeehte4uo.cpoemration of the device is described step-by-step with reference to the timing diagram below.
1. The detector monitors the MOSFET Drain-Source voltage.
2. At system start up, the MOSFET body diode is forced to conduct current from the input power
supply to the load and there is approximately -0.6V on the Drain pin.
3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the
MOSFET driver stage and current is sourced out of the GATEH pin. The turn on time of the MOSFET
can be programmed through an external resistor RG. Refer to “Speed vs. Gate resistance” graph.
4. The current out of the GATEH pin is sourced into the OR’ing MOSFET Gate to turn the device on.
5. The GATEH output voltage is proportional to the Drain-Source voltage drop across the MOSFET
due to the load current flowing through the MOSFET. The controller increases its output gate voltage
when the Drain current is high to ensure full MOSFET enhancement
6. If a short condition occurs on the input power supply it causes the OR’ing MOSFET Drain current to
fall very quickly.
7. When the Drain-Source differential voltage drops below the turn off threshold, the MOSFET Gate
voltage is pulled low by GATEL, turning the device off. This prevents high reverse current flow from
the load to the input power supply which could pull down the common bus voltage causing
catastrophic system failure
MOSFET
Drain Voltage
MOSFET
Gate Voltage
MOSFET
Gate Current
Issue 3, January 2009
©Diodes Incorporated 2008
5
www.diodes.com
5 Page 
www.datasheet4u.com
ZXGD3102T8
Figure 2: Negative telecom active OR’ing evaluation
Issue 3, January 2009
©Diodes Incorporated 2008
11
www.diodes.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet ZXGD3102T8.PDF ] | |
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