|
|
Número de pieza | LET9060C | |
Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LET9060C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! LET9060C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 60 W WITH 17.3 dB gain @ 945 MHz
• BeO FREE PACKAGE
• HIGH GAIN
• ESD PROTECTION
DESCRIPTION
The LET9060C is an N-Channel enhancement-mode
lateral Field-Effect RF power transistor, designed for
high gain broadband, commercial and industrial
applications. It operates at 28 V in common source
mode at frequencies up to 1.0 GHz. LET9060C
boasts the excellent gain, linearity and reliability of the
ST latest LDMOS technology. Its superior
performances make it an ideal solution for base
station applications.
M243
epoxy sealed
ORDER CODE
LET9060C
BRANDING
LET9060C
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
November, 4 2002
1. Drain
2. Gate
2
3. Source
Value
65
-0.5 to +15
7
118
200
-65 to +150
Unit
V
V
A
W
°C
°C
1.1 °C/W
1/5
1 page LET9060C
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2002 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LET9060C.PDF ] |
Número de pieza | Descripción | Fabricantes |
LET9060C | RF POWER TRANSISTORS Ldmos Enhanced Technology | STMicroelectronics |
LET9060S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | STMicroelectronics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |