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PDF LET21008 Data sheet ( Hoja de datos )
| Número de pieza | LET21008 | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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LET21008
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 / WCDMA
applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 8 W with 11 dB gain @ 2170 MHz / 26V
• NEW LEADLESS PLASTIC PACKAGE
• ESD PROTECTION
DESCRIPTION
The LET21008 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2.1 GHz. LET21008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the innovative leadless
SMD plastic package, PowerFLAT™.
LET21008’s superior linearity performance makes
it an ideal solution for base station applica-
tions.
PowerFLAT™(5x5)
ORDER CODE
LET21008
BRANDING
21008
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation (@ Tc = 70°C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
April, 15 2003
Value
65
-0.5 to +15
2.0
TBD
150
-65 to +150
TBD
Unit
V
V
A
W
°C
°C
°C/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET21008.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | STMicroelectronics |
| LET21008 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | STMicroelectronics |
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