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PDF LET20030S Data sheet ( Hoja de datos )
| Número de pieza | LET20030S | |
| Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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LET20030S
RF POWER TRANSISTORS
Ldmos Enhanced Technology in Plastic Package
TARGET DATA
Designed for GSM / EDGE / IS-97 applications
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
• IS-97 CDMA PERFORMANCES
POUT = 4.5 W
EFF = 17 %
PowerSO-10RF
(straight lead)
ORDER CODE
LET20030S
BRANDING
LET20030S
DESCRIPTION
The LET20030S is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 26 V in common source mode at frequencies up
to 2 GHz. LET20030S boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. LET20030S’s
superior linearity performance makes it an ideal
solution for base station applications.
PIN CONNECTION
SOURCE
GATE
DRAIN
The PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved, high
power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current
PDISS Power Dissipation
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
Value
65
-0.5 to +15
TBD
140
165
-65 to +175
Unit
V
V
A
W
°C
°C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance
February, 27 2003
1.0 °C/W
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet LET20030S.PDF ] | |
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