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Número de pieza | LET20030C | |
Descripción | RF POWER TRANSISTORS Ldmos Enhanced Technology | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LET20030C (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Designed for GSM / EDGE / IS-97 applications
LET20030C
RF POWER TRANSISTORS
Ldmos Enhanced Technology
TARGET DATA
• IS-97 CDMA PERFORMANCES
POUT = 4.5 W
EFF. = 17 %
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 30 W with 11 dB gain @ 2000 MHz
• ESD PROTECTION
DESCRIPTION
The LET20030C is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial and
industrial applications at frequencies up to 2.0 GHz.
The LET20030C is designed for high gain and
broadband performance operating in common
source mode at 26 V. It is ideal for base station
applications requiring high linearity.
M243
epoxy sealed
ORDER CODE
LET20030C
BRANDING
LET20030C
PIN CONNECTION
1
3
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol
Parameter
V(BR)DSS Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS = 1 MΩ)
VGS Gate-Source Voltage
ID Drain Current
PDISS
Power Dissipation (@ Tc = 70 °C)
Tj Max. Operating Junction Temperature
TSTG
Storage Temperature
THERMAL DATA (TCASE = 70 °C)
Rth(j-c) Junction -Case Thermal Resistance
January, 24 2003
1. Drain
2. Gate
2
3. Source
Value
65
65
-0.5 to +15
4
65
200
-65 to +200
2.0
Unit
V
V
V
A
W
°C
°C
°C/W
1/5
1 page LET20030C
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5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet LET20030C.PDF ] |
Número de pieza | Descripción | Fabricantes |
LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology | STMicroelectronics |
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