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PDF T1210T-6I Data sheet ( Hoja de datos )

Número de pieza T1210T-6I
Descripción (T12xxT-6I) Standard And Snubberless Triacs
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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T1210T-6I, T1220T-6I
T1225T-6I, T1235T-6I
Entrywww.datasheet4u.com level Snubberless™, logic level and standard 12 A TRIACs
Features
Medium current TRIAC
High static and dynamic commutation
Low thermal resistance with clip bonding
Packages is RoHS (2002/95/EC) compliant
VRM = 600 V
Insulated packaged rated at 2500 V rms
Applications
Entry-level and value-sensitive applications
General purpose AC line load switching
Motor control circuits in power tools
Small home appliances, lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole, the T12T series of
TRIACs can be used as on/off or phase angle
control function in general purpose AC switching
where high commutation capability is required.
Initially planned for power tools (T series)
equipment, this series can be used in many value
sensitive appliances thanks to the guidance on
parameters provided in the following pages.
A2
G
A1
A1
A2
G
TO-220AB insulated
(T12xxT-6I)
Table 1. Device summary
Order code
Symbol
T1220T-6I
T1235T-6I
IGT 3Q
Snubberless
T1225T-6I
IGT 4Q
standard
T1210T-6I
IGT 3Q
logic level
Value
20 / 35 mA
25 mA
10 mA
TM: Snubberless is a trademark of STMicroelectronics
March 2009
Rev 1
1/9
www.st.com
9

1 page




T1210T-6I pdf
T1210T-6I, T1220T-6I, T1225T-6I, T1235T-6I
Characteristics
Figure 7.
Non repetitive surge peak on state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
www.datasheet4u.cIoTSmM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
100
Tj initial=25°C
ITSM
I²t
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
3.0
typical values
2.5
2.0
IGT Q3
IGT Q1-Q2
1.5
1.0 VGT Q1-Q2-Q3
pulse with width tp < 10 ms and corresponding value of I2T
10
0.01 0.10 1.00
tP(ms)
10.00
0.5
Tj(°C)
0.0
- 50 -25 0 25 50 75 100 125
Figure 9.
Relative variation of holding
Figure 10. Relative variation of critical rate of
current and latching current versus
decrease of main current versus
junction temperature
(dV/dt)c
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.5
2.0
typical values
1.5
1.0
IL
0.5 IH
Tj(°C)
0.0
-50 -25 0 25 50 75 100 125
7 dV/dt [T j] / dV/dt [T j=125 °C]
typical values
6 Logic Level and Snubberless types
VD=VR=402 V
5
4
3
2
1
Tj(°C)
0
25 50 75 100 125
Figure 11. Relative variation of critical rate of Figure 12. Leakage current versus junction
decrease of main current versus
temperature for different values of
junction temperature
blocking voltage (typical values)
8 (dI/dt)C [T j] / (dI/dt) c [T j=125 °C]
7
6
5
4
3
2
1
0
25 50
75
Tj(°C)
100 125
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=125°C;7 00V]
1.0E+00
VDRM=VRRM
=600 V
1.0E-01
VDRM=VRRM
=400 V
1.0E-02
VDRM=VRRM
=200 V
1.0E-03
Tj(°C)
25 50 75 100 125
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