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Número de pieza | LBCW69LT1G | |
Descripción | (LBCW69LT1G / LBCW70LT1G) General Purpose Transistors PNP Silicon | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LBCW69LT1G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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General Purpose Transistors
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We declare that the material of product
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MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Emitter–Base Voltage
V CEO
V EBO
Collector Current — Continuous I C
1
BASE
3
COLLECTOR
2
EMITTER
Value
– 45
– 5.0
– 100
Unit
Vdc
Vdc
mAdc
LBCW69LT1G
LBCW70LT1G
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
–55 to +150
°C/W
°C
DEVICE MARKING
LBCW69LT1G = H1; LBCW70LT1G= H2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )
Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V EB = 0 )
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
Collector Cutoff Current
(VCE = –20 Vdc, I E = 0 )
(VCE = –20 Vdc, I E = 0 , TA = 100°C)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CES
V (BR)EBO
I CEO
Min Max Unit
– 45
– 50
– 5.0
—
—
—
Vdc
Vdc
Vdc
—
– 100
nAdc
— – 10 µAdc
1/7
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LESHAN RADIO COMPANY, LTD.
LBCW69LT1G LBCW70LT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
V = 3.0 V
CC
IC /I B= 10
T J= 25°C
td @ V =BE(off) 0.5 V
t
r
2.0 3.0 5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
1000
V = –3.0 V
700
500
CC
IC /I B= 10
300
t s IB1=IB2
T J= 25°C
200
100
70
50 t f
30
20
10
–1.0
–2.0 –3.0 –5.0 –7.0 –10
–20 –30 –50 –70 –100
I C , COLLECTOR CURRENT (mA)
Figure 11. Turn–Off Time
500
T J = 25°C
300 V CE=20 V
5.0 V
200
10.0
T J= 25°C
7.0
C ib
5.0
3.0
100 2.0 C ob
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain — Bandwidth Product
1.0
0.05 0.1
0.2
0.5 1.0 2.0
5.0 10 20
V R , REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
50
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01
0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
FIGURE 16
P(pk)
t1
t2
DUTY CYCLE, D = t 1 / t 2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
T J(pk) – T A = P (pk) Z θJA(t)
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k
t, TIME (ms)
Figure 14. Thermal Response
5/7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet LBCW69LT1G.PDF ] |
Número de pieza | Descripción | Fabricantes |
LBCW69LT1G | (LBCW69LT1G / LBCW70LT1G) General Purpose Transistors PNP Silicon | Leshan Radio Company |
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