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PDF LBC857BWT1G Data sheet ( Hoja de datos )

Número de pieza LBC857BWT1G
Descripción (LBC85xxWT1G) General Purpose Transistors PNP Silicon
Fabricantes Leshan Radio Company 
Logotipo Leshan Radio Company Logotipo



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No Preview Available ! LBC857BWT1G Hoja de datos, Descripción, Manual

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max Unit
150 mW
833
–55 to +150
°C/W
°C
LBC856AWT1G, BWT1G
LBC857AWT1G, BWT1G
LBC858AWT1G, BWT1G
CWT1G
3
1
2
SOT– 323 / SC-70
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F;
LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
Collector–Base Breakdown Voltage
(IC = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65 —
V (BR)CEO
– 45
v
– 30 —
– 80 —
V (BR)CES
– 50
v
– 30 —
– 80 —
V (BR)CBO
– 50
v
– 30 —
– 5.0
V (BR)EBO
– 5.0
v
– 5.0
I CBO — — – 15 nA
— — – 4.0 µA
1/6

1 page




LBC857BWT1G pdf
LESHAN RADIO COMPANY, LTD.
LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G
www.datasheet4u.com
1.0
0.7 D=0.5
0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.05
0.01
0.1
0.2
0.5
SINGLE PULSE
SINGLE PULSE
P(pk)
t
1
t2
DUTY CYCLE, D = t 1 /t 2
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T – T = P R (t)
J(pk) C (pk) θJC
1.0 2.0
5.0 10 20
50 100
t, TIME (ms)
Figure 13. Thermal Response
200
500 1.0k 2.0k
5.0k 10k
–200
–100
–50
–10
–5.0
–2.0
–1.0
1s 3 ms
TA= 25°C TJ= 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–0.5 –10
–30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
5/6

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