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Número de pieza | LBC846ALT1 | |
Descripción | General Purpose Transistors NPN Silicon | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LBC846ALT1 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
www.datasheet4u.com
NPN Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCEO
Collector–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VCBO
Emitter–Base Voltage
LBC846
LBC847, LBC850
LBC848, LBC849
VEBO
Collector Current – Continuous
THERMAL CHARACTERISTICS
IC
Characteristic
Symbol
Total Device Dissipation FR–5 Board
(Note 1.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 1.)
RqJA
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
PD
Thermal Resistance,
Junction to Ambient (Note 2.)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Value
65
45
30
80
50
30
6.0
6.0
5.0
100
Max
225
1.8
556
300
2.4
417
–55 to
+150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
LBC846ALT1
Series
3
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
xx= Device Marking
(See Table Below)
LBC846ALT1S-1/6
1 page LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
LBC846
1.0
0.8
0.6
0.4
LBC846ALT1 Series
TA = 25°C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
0.2
VCE(sat) @ IC/IB = 10
0
0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
2.0 -1.0
TA = 25°C
1.6 -1.4
20 mA 50 mA 100 mA
200 mA
1.2
0.8
IC =
10 mA
-1.8
θVB for VBE
-55°C to 125°C
-2.2
0.4 -2.6
0
0.02
0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
Figure 9. Collector Saturation Region
20
-3.0
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
40
TA = 25°C
20
Cib
10
6.0
4.0 Cob
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
50 100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0 5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
LBC846ALT1S-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet LBC846ALT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
LBC846ALT1 | General Purpose Transistors NPN Silicon | Leshan Radio Company |
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