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Número de pieza | FDMA410NZ | |
Descripción | Single N-Channel 1.5 V Specified PowerTrench MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! September 2008
FDMA410NZ
Single N-Channel 1.5 V Specified PowerTrench® MOSFET
www.datash2ee0t4uV.c,o9m.5 A, 23 mΩ
tm
Features
General Description
Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
HBM ESD protection level > 2.5 kV (Note 3)
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
RoHS Compliant
Pin 1
Drain
DD G
Source
Bottom Drain Contact
D1
6D
D2
5D
DD S
MicroFET 2X2 (Bottom View)
G3
4S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
9.5
24
2.4
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
410
Device
FDMA410NZ
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
www.datasheet4u.com
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 145 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
10-3
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2008 Fairchild Semiconductor Corporation
FDMA410NZ Rev.B
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMA410NZ.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMA410NZ | Single N-Channel 1.5 V Specified PowerTrench MOSFET | Fairchild Semiconductor |
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