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Número de pieza | IRLB3034PBF | |
Descripción | 40V Single N-Channel HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRLB3034PbF
Applications
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l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
40V
:RDS(on) typ.
1.4m
:max. 1.7m
cID (Silicon Limited) 343A
S ID (Package Limited) 195A
TO-220AB
IRLB3034PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
dAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat, Greased Surface
RθJA Junction-to-Ambient
D
Drain
Max.
c343
c243
195
1372
375
2.5
±20
4.6
-55 to + 175
300
x x10lbf in (1.1N m)
255
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.5
–––
Max.
0.4
–––
62
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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1
01/14/09
1 page IRLB3034PbF
1
0.1
www.datasheet4u.com
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
0.02477
0.08004
τi (sec)
0.000025
0.000077
τ4τ4 0.19057 0.001656
CiC= iτi/Ri/iRi
0.10481 0.008408
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
100 0.01
0.05
0.10
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
250 ID = 195A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRLB3034PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLB3034PBF | 40V Single N-Channel HEXFET Power MOSFET | International Rectifier |
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