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PDF IRLBD59N04E Data sheet ( Hoja de datos )
| Número de pieza | IRLBD59N04E | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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l Integrated Temperature Sensing Diode
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fully Avalanche Rated
l Zener Gate Protected
Description
The IRLBD59N04E is a 40V, N-channel HEXFET®
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
IG
VESD
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
VGS Clamp Current
Electrostatic Votage Rating
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD -93910
IRLBD59N04E
HEXFET® Power MOSFET
VDSS = 40V
RDS(on) = 0.018Ω
ID = 59A
5 Lead-D2Pak
Max.
59
41
230
130
0.89
± 10
320
35
13
2.2
± 50
± 2.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
Typ.
–––
–––
Max.
1.12
40
Units
°C/W
1
4/11/00
1 page  
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60
50
LIMITED BY PACKAGE
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRLBD59N04E
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
VDS
90%
10%
VGS
td(on) tr
td(off) tf
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.00001
PDM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLBD59N04E.PDF ] | |
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