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PDF FDMJ1023PZ Data sheet ( Hoja de datos )
| Número de pieza | FDMJ1023PZ | |
| Descripción | Dual P-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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August 2007
FDMJ1023PZ
Dual P-Channel PowerTrench® MOSFET
www.datash–ee2t40uV.co,m–2.9A, 112mΩ
tm
Features
General Description
Max rDS(on) = 112mΩ at VGS = –4.5V, ID = –2.9A
Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.4A
Max rDS(on) = 210mΩ at VGS = –1.8V, ID = –2.1A
Max rDS(on) = 300mΩ at VGS = –1.5V, ID = –1.0A
Low gate charge, high power and current handling capability
HBM ESD protection level > 1.5kV typical (Note 3)
RoHS Compliant
This dual P-Channel MOSFET uses Fairchild’s advanced low
voltage PowerTrench® process. This device is designed
specifically as a single package solution for the battery charge
switch in cellular handset and other ultra-portable applications. It
features two independent P-Channel MOSFETs with low
on-state resistance for minimum conduction losses. When
connected in the typical common source configuration,
bi-directional current flow is possible. The SC-75 MicroFET
package offers exceptional thermal performance for its physical
size and is well suited to linear mode applications.
Applications
Battery management/charger application
Pin 1
S1 S2 G2
Bottom Drain Contact
D1 D2
S2 4
S1 5
Q2 3 G2
2 S2
G1 S1 S2
SC-75 MicroFET
G1 6
Q1
1 S1
Bottom Drain Contact
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–2.9
–12
1.4
0.7
–55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
89
°C/W
(Note 1b)
182
Device Marking
023
Device
FDMJ1023PZ
Package
SC-75 MicroFET
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMJ1023PZ Rev.B
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
www.datasheet4u.com
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
0.005
10-4
SINGLE PULSE
RθJA = 182oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
102
103
©2007 Fairchild Semiconductor Corporation
FDMJ1023PZ Rev.B
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDMJ1023PZ.PDF ] | |
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