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PDF PD85035C Data sheet ( Hoja de datos )
| Número de pieza | PD85035C | |
| Descripción | RF power transistor | |
| Fabricantes | STMicroelectronics | |
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PD85035C
www.datasheet4u.com
RF power transistor - LdmoST family
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 35 W with 14.5 dB gain @ 945 MHz /
13.6 V
■ BeO-free ceramic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
M243
Epoxy sealed
Description
The PD85035C is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85035C boasts the excellent gain, linearity and
reliability of ST’s latest LDMOS technology.
PD85035C’s superior linearity performance
makes it an ideal solution for car mobile radio.
Figure 1. Pin connection
1
3
2
1. Drain
2. Gate
3. Source
Table 1.
Device summary
Order code
PD85035C
Package
M243
Packing
Box
November 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/10
www.st.com
10
1 page  
PD85035C
3 Impedance
Figure 2. Current conventions
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Impedance
Table 7. Impedance data
Freq. (MHz)
945 MHz
ZIN (Ω)
1.08 +j 2.05
ZDL(Ω)
2.14 + j 2.17
5/10
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| PDF Descargar | [ Datasheet PD85035C.PDF ] | |
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