|
|
PDF K30N60HS Data sheet ( Hoja de datos )
| Número de pieza | K30N60HS | |
| Descripción | SKW30N60HS | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
 1. 600V, 30A, IGBT - Infineon  Hay una vista previa y un enlace de descarga de K30N60HS (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
|
No Preview Available !
SKW30N60HS
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
Eoff Tj Marking
Package
SKW30N60HS
600V 30 480µJ 150°C K30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
41
30
112
112
41
28
112
±20
±30
10
250
-55...+150
175
260
Unit
V
A
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 Sep 08
1 page  
SKW30N60HS
100A
80A
TC=80°C
60A TC=110°C
40A Ic
20A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
100A
10A
1A
tP=4µs
15µs
50µs
200µs
1ms
DC
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C;
VGE=15V)
200W
150W
100W
Limited by Bond wire
40A
30A
20A
50W
10A
0W
25°C
50°C
75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
0A
25°C
Figure 4.
75°C
125°C
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2.2 Sep 08
5 Page 
SKW30N60HS
TJ=-55°C
25°C
50A 150°C
40A
30A
20A
10A
0A
0,0V
0,5V
1,0V
1,5V
2,0V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
IF=60A
2,0
IF=30A
1,5
IF=15A
1,0
0,5
0,0
-50
0
50 100 150
TJ, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as a
function of junction temperature
100K/W D=0.5
0.2
0.1
10-1K/W 0.05
1 0 -2 K /W
0.02
0.01
R,(K/W)
0.358
0.367
0.329
0.216
0.024
τ, (s)
9.02*10-2
9.42*10-3
9.93*10-4
1.19*10-4
1.92*10-5
R1 R2
single pulse
C1=τ1/R1 C2=τ2/R2
1 0 -3 K /W
1µs 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Power Semiconductors
11
Rev. 2.2 Sep 08
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet K30N60HS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K30N60HS | SKW30N60HS | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |