(PDF) KDS8928A Datasheet - Dual N & P-Channel Enhancement Mode Field Effect Transistor

Número de pieza	KDS8928A
Descripción	Dual N & P-Channel Enhancement Mode Field Effect Transistor
Fabricantes	Guangdong Kexin Industrial
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No Preview Available ! SMD Type TransistIoCrs www.datasheet4u.com Dual N & P-Channel Enhancement Mode Field Effect Transistor KDS8928A Features N-Channel 5.5 A, 30 V RDS(ON) = 0.030 @ VGS = 4.5V RDS(ON) = 0.038 @ VGS =2.5V P-Channel -4 A, -20 V RDS(ON) = 0.055 @ VGS =- 4.5 V RDS(ON) = 0.070 @ VGS =-2.5V High density cell design for extremely low RDS(ON). High power and handling capability in a widely used surface mount package Dual (N & P-Channel) MOSFET in surface mount package. Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (Note 1a) Drain Current Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Temperature Thermal Resistance Junction to Ambient (Note 1a) Thermal Resistance Junction to Case (Note 1) Symbol VDSS VGS ID PD PD TJ, TSTG R JA R JC N-Channel P- Channel 30 30 8 -8 5.5 -4 20 -20 2 1.6 1 0.9 -55 to 150 78 40 Unit V V A A W W /W /W www.kexin.com.cn 1 1 page

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PDF KDS8928A Data sheet ( Hoja de datos )